Method of manufacturing NAND flash device

Details Method of manufacturing NAND flash device Method of manufacturing NAND flash device

2005-12-27

2005-12-27

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S263000, C438S522000

Reexamination Certificate

active

06979618

ABSTRACT:
A method of manufacturing a NAND flash device which can improve uniformity of disturb fail characteristics by performing an annealing process after an ion implantation process for forming a P well, reduce a fail bit count by performing an annealing process after an ion implantation process for controlling a threshold voltage and before a process for forming a high voltage gate oxide film, and prevent disturb fail by omitting an STI ion implantation process in a cell region.

REFERENCES:
patent: 5751631 (1998-05-01), Liu et al.
patent: 5907171 (1999-05-01), Santin et al.
patent: 6660604 (2003-12-01), Hwang et al.

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