Method of manufacturing mosfet with differential gate oxide thic

Details Method of manufacturing mosfet with differential gate oxide thic Method of manufacturing mosfet with differential gate oxide thic

1998-12-04

2000-12-26

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438279, 438528, H01L 21336

Patent

active

061658499

ABSTRACT:
A semiconductor device is formed having a low voltage transistor in a logic core portion and a high voltage transistor in an input/output portion. The low voltage transistor is formed by ion implanting nitrogen into the surface and forming a gate oxide layer on the nitrogen implanted surface portion of the semiconductor substrate in the logic core region. The implanted nitrogen retards the growth of the gate oxide layer in the nitrogen implanted area, thereby enabling formation of gate oxide layers having different thicknesses.

REFERENCES:
patent: 4663827 (1987-05-01), Nakahara
patent: 4710265 (1987-12-01), Hotta
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5254487 (1993-10-01), Tamagawa
patent: 5480828 (1996-01-01), Hsu et al.
patent: 5672521 (1997-09-01), Barsan et al.
patent: 5920779 (1999-07-01), Sun et al.

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