Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-14
2006-02-14
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S304000, C438S595000
Reexamination Certificate
active
06998302
ABSTRACT:
A method for fabricating a transistor in a semiconductor device is disclosed. An example method forms an isolation region in a semiconductor substrate and sequentially deposits a pad oxide layer, a pad nitride layer and a first oxide layer on the substrate and the isolation region. The example method also patterns the first oxide layer and pad nitride layer to form a gate electrode, deposits a doped poly silicon layer, forms a doped polysilicon sidewall on the pad nitride layer and the first oxide layer, etches the pad oxide layer, sequentially deposits and planarizing a gate isolation layer, a gate nitride layer and a metal layer on the substrate to form the gate electrode. In addition, the example method forms a source, a drain, a gate plug, a source plug and a drain plug, respectively.
REFERENCES:
patent: 6346467 (2002-02-01), Chang et al.
patent: 6727151 (2004-04-01), Chong et al.
patent: 2002/0001935 (2002-01-01), Kim et al.
patent: 2003/0151098 (2003-08-01), Nishida et al.
Chen Jack
Dongbu Anam Semiconductor Inc.
Hanley Flight & Zimmerman LLC
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