Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-14
2006-11-14
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000
Reexamination Certificate
active
07135365
ABSTRACT:
First, a substrate having a plurality of NMOS transistor regions and PMOS transistor regions is provided. The substrate further includes a plurality of gate structures respectively positioned in the NMOS transistor regions and the PMOS transistor regions. A high-tensile thin film is then formed on the substrate and the plurality of gate structures. Subsequently, an annealing process is performed, and the high-tensile thin film is removed after the annealing process.
REFERENCES:
patent: 6107147 (2000-08-01), Kim et al.
patent: 2004/0262692 (2004-12-01), Hareland et al.
patent: 2005/0112817 (2005-05-01), Cheng et al.
Chang Tzu-Yun
Chen Wen-Chi
Huang Cheng-Tung
Lan Bang-Chiang
Liao Kuan-Yang
Hsu Winston
Lindsay Jr. Walter L.
United Microelectronics Corp.
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