Method of manufacturing MOS transistor

Details Method of manufacturing MOS transistor Method of manufacturing MOS transistor

2008-12-28

2009-12-15

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S227000, C257SE27062

Reexamination Certificate

active

07632732

ABSTRACT:
A method of manufacturing a transistor may include: forming a first well over a silicon substrate; forming a first mask pattern over the silicon substrate and using the formed first mask pattern to form a second well; removing the first mask pattern; forming a second mask pattern over the silicon substrate and using the formed second mask pattern to form a first drift region; removing the second mask pattern; forming a third mask pattern and using the formed third mask pattern to form a second drift region; removing the third mask pattern; forming a field oxide film over the silicon substrate; and introducing first conductive impurity ions into an upper surface of the silicon substrate by channel ion implantation.

REFERENCES:
patent: 5382820 (1995-01-01), Yang et al.
patent: 5618743 (1997-04-01), Williams et al.
patent: 6900101 (2005-05-01), Lin
patent: 2004/0171258 (2004-09-01), Park
patent: 2008/0057637 (2008-03-01), Choi
patent: 10-2000-0061623 (2000-10-01), None
patent: 10-2004-0077025 (2004-09-01), None

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