Method of manufacturing MOS components having lightly doped drai

Details Method of manufacturing MOS components having lightly doped drai Method of manufacturing MOS components having lightly doped drai

1997-07-09

1999-10-12

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438302, 438525, H01L 21336

Patent

active

059666048

ABSTRACT:
The present invention relates to a method of manufacturing MOS components having lightly doped drains wherein the implanting type ion used is different than that used in the formation of the source/drain regions. The present invention also includes the use of a tilt implantation angle accompanied by substrate rotation during the implantation process to form lightly doped drain structures on two sides of the source/drain regions. The mask is the same for the formation of the source/drain regions as that for the formation of the lightly doped drain regions. The method of manufacturing MOS components having lightly doped drains according to this invention has fewer manufacturing processes for the formation of spacers than the conventional methods. Moreover, the reduction in spacer production results in an increased contact surface area for subsequent contact window formation, thereby lowering contact resistance.

REFERENCES:
patent: 5308780 (1994-05-01), Chou et al.
patent: 5355006 (1994-10-01), Iguchi
patent: 5426063 (1995-06-01), Kaneko et al.
patent: 5736416 (1998-04-01), Johansson
patent: 5849615 (1998-12-01), Ahmad et al.
patent: 5874329 (1999-02-01), Neary et al.
patent: 5882961 (1999-03-01), Klingbeil, Jr. et al.

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