Method of manufacturing metal-oxide-semiconductor transistor

Details Method of manufacturing metal-oxide-semiconductor transistor Method of manufacturing metal-oxide-semiconductor transistor

2006-05-02

2006-05-02

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S303000, C438S305000

Reexamination Certificate

active

07037773

ABSTRACT:
A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure.

REFERENCES:
patent: 6262445 (2001-07-01), Swanson et al.
patent: 6576963 (2003-06-01), Jin et al.
patent: 6579770 (2003-06-01), Rodder et al.
patent: 6713360 (2004-03-01), Jain et al.
patent: 2003/0020111 (2003-01-01), Bevan
patent: 2003/0045048 (2003-03-01), Marsh
patent: 2003/0211697 (2003-11-01), Hsu et al.
patent: 2004/0137373 (2004-07-01), Lei et al.
patent: 2004/0266057 (2004-12-01), Nagasawa

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