Method of manufacturing metal-oxide-semiconductor transistor

Details Method of manufacturing metal-oxide-semiconductor transistor Method of manufacturing metal-oxide-semiconductor transistor

2005-09-13

2005-09-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S306000, C438S486000

Reexamination Certificate

active

06943085

ABSTRACT:
A method of manufacturing a MOS transistor is provided. A substrate having a gate structure thereon is provided. A first spacer is formed on the sidewall of the gate structure. A pre-amorphization implantation is carried out to amorphize a portion of the substrate. A doped source/drain extension region is formed in the substrate on each side of the first spacer. A second spacer is formed on the sidewall of the first spacer. A doped source/drain region is formed in the substrate on each side of the second spacer and then a pre-annealing operation is performed. Thereafter, a solid phase epitaxial process is carried out to re-crystallize the amorphized portion of the substrate and activate the doped source/drain extension region and the doped source/drain region to form a source/drain terminal. Finally, a post-annealing operation is performed.

REFERENCES:
patent: 6225176 (2001-05-01), Yu
patent: 6703281 (2004-03-01), Yu

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