Method of manufacturing metal oxide semiconductor

Details Method of manufacturing metal oxide semiconductor Method of manufacturing metal oxide semiconductor

2006-04-17

2009-02-03

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S197000, C438S199000, C438S301000, C257SE21006, C257SE21177, C257SE21433

Reexamination Certificate

active

07485515

ABSTRACT:
A method of forming compressive nitride film is provided. The method includes performing a chemical vapor deposition (CVD) process to form a nitride film on a substrate, and the method is characterized by adding a certain gas, selected from among Ar, N2, Kr, Xe, and mixtures thereof. Due to the addition of the foregoing certain gas, it can increase the compressive stress, thereby increasing PMOS drive current gain.

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