Method of manufacturing metal gate MOSFET with strained channel

Details Method of manufacturing metal gate MOSFET with strained channel Method of manufacturing metal gate MOSFET with strained channel

2006-05-09

2006-05-09

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S719000, C438S720000, C438S721000

Reexamination Certificate

active

07041601

ABSTRACT:
A method of manufacturing a MOSFET type semiconductor device includes forming a fin structure and a dummy gate structure over the fin structure. Sidewall spacers may be formed adjacent the dummy gate structure. The dummy gate structure may be later removed and replaced with a metal layer that is formed at a high temperature (e.g., 600°–700° C.). The cooling of the metal layer induces strain to the fin structure that affects the mobility of the double-gate MOSFET.

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