Method of manufacturing mask read-only-memory

Details Method of manufacturing mask read-only-memory Method of manufacturing mask read-only-memory

1999-05-06

2000-12-26

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218246

Patent

active

061658502

ABSTRACT:
A method of manufacturing mask read-only-memory. The method includes forming a plurality of first and second active regions in designated locations on a substrate. Each first and second active region has a channel region and a source/drain region on both side of the channel. Subsequently, shallow trench oxide are formed within the channel regions of the first active regions, and then source/drain terminals are formed in the respective source/drain regions of first and second active regions. Finally, a gate terminal is formed over the channel region.

REFERENCES:
patent: 5480823 (1996-01-01), Hsu
patent: 5573966 (1996-11-01), Hsu
patent: 5652162 (1997-07-01), Liao
patent: 5920778 (1999-07-01), Rosner et al.
patent: 5923992 (1999-07-01), Spikes et al.
patent: 5998278 (1999-12-01), Yu
patent: 6040231 (2000-03-01), Wu

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