Method of manufacturing M-I-M capacitor of semiconductor device

Details Method of manufacturing M-I-M capacitor of semiconductor device Method of manufacturing M-I-M capacitor of semiconductor device

2011-08-30

2011-08-30

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000, C438S760000, C438S957000, C257SE21409

Reexamination Certificate

active

08008148

ABSTRACT:
A method for manufacturing a semiconductor device includes sequentially forming an insulating layer and a metal layer over a semiconductor substrate, forming a photoresist pattern over the metal layer and etching the metal layer using the photoresist pattern as an etching mask to form a metal line pattern, subjecting the photoresist pattern to a reflow process to form a photoresist pattern over the metal layer and etching the metal layer using the photoresist pattern as an etching mask to form a metal line pattern, subjecting the photoresist pattern to a reflow process to form a reflowed photoresist pattern surrounding the metal line pattern, forming a metal-insulator-metal (MIM) layer over the semiconductor substrate provided with the reflowed photoresist pattern, and removing the MIM layer arranged over the photoresist pattern and the photoresist pattern.

REFERENCES:
patent: 2002/0159010 (2002-10-01), Maeda et al.
patent: 2007/0275525 (2007-11-01), Das et al.
patent: 2008/0217740 (2008-09-01), Shiramizu et al.
patent: 2007-65035 (2007-06-01), None

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