Method of manufacturing integrated circuits including a FET...

Details Method of manufacturing integrated circuits including a FET... Method of manufacturing integrated circuits including a FET...

2011-01-04

2011-01-04

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S424000, C257S328000, C257SE29262

Reexamination Certificate

active

07863136

ABSTRACT:
A method of manufacturing integrated circuits including a FET with a gate spacer. One embodiment provides forming a lamella of a semiconductor material and two insulator structures on opposing sides of the lamella. The lamella is recessed. A fin is formed from a central portion of the lamella. The fin is thinner than a first and a second portion of the lamella which face each other on opposing sides of the fin. A first spacer structure is formed which encompasses a first portion of the fin, the first portion adjoining to the first lamella portion. A gate electrode is disposed adjacent to the first spacer structure and encompasses a further portion of the fin on a top side and on two opposing lateral sides.

REFERENCES:
patent: 6413802 (2002-07-01), Hu et al.
patent: 6962843 (2005-11-01), Anderson et al.
patent: 7074662 (2006-07-01), Lee et al.
patent: 7211864 (2007-05-01), Seliskar
patent: 7626230 (2009-12-01), Joo et al.
patent: 7692254 (2010-04-01), Anderson et al.
patent: 2005/0199920 (2005-09-01), Lee et al.
patent: 2006/0057802 (2006-03-01), Nowak et al.
patent: 2007/0026629 (2007-02-01), Chen et al.

Affiliated with

Also associated with

Rating

Method of manufacturing integrated circuits including a FET... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing integrated circuits including a FET..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing integrated circuits including a FET... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2624887