Method of manufacturing inductor device on a silicon substrate t

Details Method of manufacturing inductor device on a silicon substrate t Method of manufacturing inductor device on a silicon substrate t

1999-01-19

2000-07-25

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438381, H01L 218234

Patent

active

060935995

ABSTRACT:
The present invention relates to a on silicon substrate, specifically to an inductor device and manufacturing method thereof for enhancing the quality factor of the inductor by disposing trenches on a silicon substratre, and by filling the inside of the trenches with polycrystalline polysilicon not doped with impurities. The present invention provides an inductor device and a manufacturing method thereof which can improve the quality factor by increasing resistance of the substrate by forming deep trenches disposed in specific patterns on a low-resistance silicon substrate and filling polycrystalline silicon not doped with impurities, and by reducing parasitic capacitance between the inductor and the silicon substrate.

REFERENCES:
patent: 5227659 (1993-07-01), Hubbard
patent: 5336921 (1994-08-01), Sundaram et al.
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5541442 (1996-07-01), Keil et al.
patent: 5656849 (1997-08-01), Burghartz et al.
patent: 5663570 (1997-09-01), Reedy et al.
patent: 5773353 (1998-06-01), Kwon et al.
patent: 5872043 (1998-06-01), Chen
Marc E. Goldfarb et al., "The Effect of Air Bridge Height on the Propagation Characteristics of Microstrip", IEEE Microwave and Guided Wave Letters, vol. 1, No. 10, Oct. 1991, pp. 18-19.
Ronald G. Arnold et al., "Microwave Characterization of Microstrip Lines and Spiral Inductors in MCM-D Technology", 1992 IEEE.
Joachim N. Burghartz et al., "High-Q Inductors in Standard Silicon Interconnect Technology and its Application to an Integrated RF Power Amplifier", IEDM 95, 29.8.1-29.8.3, pp. 1015-1017.

Affiliated with

Also associated with

Rating

Method of manufacturing inductor device on a silicon substrate t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing inductor device on a silicon substrate t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing inductor device on a silicon substrate t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1335820