Method of manufacturing improved double-diffused...

Details Method of manufacturing improved double-diffused... Method of manufacturing improved double-diffused...

2005-09-20

2005-09-20

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000

Reexamination Certificate

active

06946335

ABSTRACT:
The present invention relates to an integrated circuit manufacturing method for producing a double-diffused metal-oxide-semiconductor (DMOS), which utilizes a removable spacer method with a self-aligned channel to manufacture an improved DMOS with a reduced parasitic capacitance, and a high-resistance DMOS for a high power application can thus be fabricated also. Via the present invention, a faster switch with more usable operating frequencies can be achieved.

REFERENCES:
patent: 6025232 (2000-02-01), Wu et al.
patent: 6876035 (2005-04-01), Abadeer et al.

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