Method of manufacturing high-voltage device

Details Method of manufacturing high-voltage device Method of manufacturing high-voltage device

2008-04-22

2008-04-22

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S258000, C438S275000, C438S286000, C438S303000, C438S304000, C438S305000

Reexamination Certificate

active

11438992

ABSTRACT:
A method of manufacturing a high-voltage device DDD (Double Doped Drain) ion implantation process is performed at a tilt angle in order to form a smooth junction profile. Accordingly, the intensity of an electric field can be reduced and breakdown voltage margin can be secured.

REFERENCES:
patent: 5631485 (1997-05-01), Wei et al.
patent: 6069031 (2000-05-01), Wu

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