Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-05
2005-04-05
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S267000, C438S262000, C438S279000, C438S283000, C438S595000, C438S596000
Reexamination Certificate
active
06875660
ABSTRACT:
A method of manufacturing a flash memory is provided. First, a substrate with a first gate structure and a second gate structure thereon is provided. The first gate structure and the second gate structure each comprises of a dielectric layer, a first conductive layer and a cap layer. A tunneling oxide layer is formed over the substrate and then a first spacer is formed on the sidewall of the first conductive layer. Thereafter, a second conductive layer is formed on one side designated for forming a source region of the sidewalls of the first gate structure and the second gate structure. Then, the source region is formed in the substrate in the designated area. Next, an inter-gate dielectric layer is formed over the second conductive layer and then an insulating layer is formed over the source region. After forming a third conductive layer over the area between the first gate structure and the second gate structure, a drain region is formed in the substrate.
REFERENCES:
patent: 5494838 (1996-02-01), Chang et al.
patent: 6117733 (2000-09-01), Sung et al.
patent: 6245614 (2001-06-01), Hsieh et al.
patent: 6436764 (2002-08-01), Hsieh
patent: 6462375 (2002-10-01), Wu
patent: 6563166 (2003-05-01), Ni
patent: 20030181051 (2003-09-01), Chang et al.
patent: 451480 (2001-08-01), None
Hsu Cheng-Yuan
Hung Chih-Wei
Sung Da
Duong Khanh
Liang Chyun IP Office
Powerchip Semiconductor Corp.
Zarabian Amir
LandOfFree
Method of manufacturing high coupling ratio flash memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing high coupling ratio flash memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing high coupling ratio flash memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3440916