Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-04-29
2008-04-29
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257S029000, C438S172000
Reexamination Certificate
active
07364988
ABSTRACT:
A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
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Basceri Cem
Gehrke Thomas
Harris Christopher
Weeks, Jr. T. Warren
Cree Inc.
Mulpuri Savitri
Volentine & Whitt P.L.L.C.
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