Method of manufacturing flash semiconductor device

Details Method of manufacturing flash semiconductor device Method of manufacturing flash semiconductor device

2007-07-23

2010-06-22

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S318000

Reexamination Certificate

active

07741179

ABSTRACT:
A method of manufacturing a flash semiconductor device minimizes a loss of dopant caused by dopant out-diffusion. A trench is formed in a semiconductor substrate. At least one poly gate is formed in the semiconductor substrate including the trench. An RCS (Recess Common Source) region is formed in the trench. Dopant ions are implanted into the RCS region, and an annealing process is applied to the RCS region.

REFERENCES:
patent: 6583046 (2003-06-01), Okada et al.
patent: 7445998 (2008-11-01), Young et al.
patent: 2005/0145920 (2005-07-01), Chang et al.
patent: 2007/0010056 (2007-01-01), Kim

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