Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-05-02

2006-05-02

Tran, Michael (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000, C438S435000, C257S279000, C257S546000

Reexamination Certificate

active

07037785

ABSTRACT:
Disclosed is a method of manufacturing the flash memory device. The method comprises the steps of sequentially forming a tunnel oxide film, a first polysilicon film and a hard mask film on a semiconductor substrate, etching portions of the hard mask film, the first polysilicon film, the tunnel oxide film and the semiconductor substrate through a patterning process to form a trench within the semiconductor substrate, depositing an oxide film to bury the trench and then polishing the oxide film by means of a chemical mechanical polishing process until the hard mask film is exposed, removing the hard mask film, implementing a cleaning process so that a protrusion of the oxide film is recessed to an extent that the sidewall bottom of the first polysilicon film is not exposed, depositing a second polysilicon film on the results in which the protrusion of the oxide film is recessed and then polishing the second polysilicon film until the protrusion of the oxide film is exposed, forming a dielectric film on the second polysilicon film, and forming a control gate on the dielectric film.

REFERENCES:
patent: 6465293 (2002-10-01), Park et al.
patent: 6607925 (2003-08-01), Kim et al.
patent: 6649965 (2003-11-01), Takada et al.
patent: 2000-174242 (2000-06-01), None
patent: 2002-083884 (2002-03-01), None
Office Action isued by Korean Intellectual Property Office dated Oct. 26, 2004.

Affiliated with

Also associated with

Rating

Method of manufacturing flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3559891