Method of manufacturing flash memory device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S248000, C438S391000, C438S700000, C438S647000, C438S314000, C438S257000, C438S258000, C438S260000, C438S261000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000, C438S267000

Reexamination Certificate

active

08048739

ABSTRACT:
According to yet another embodiment, a method for forming a non-volatile memory device includes etching a substrate to form first and second trenches. The first and second trenches are filled with an insulating material to form first and second isolation structures. A conductive layer is formed over the first and second isolation structures and between the first and second isolation structures to form a floating gate. The conductive layer and the first isolation structure are etched to form a third trench having an upper portion and a lower portion, the upper portion having vertical sidewalls and the lower portion having sloping sidewalls. The third trench is filled with a conductive material to form a control gate.

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