Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-30
2011-11-01
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S248000, C438S391000, C438S700000, C438S647000, C438S314000, C438S257000, C438S258000, C438S260000, C438S261000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000, C438S267000
Reexamination Certificate
active
08048739
ABSTRACT:
According to yet another embodiment, a method for forming a non-volatile memory device includes etching a substrate to form first and second trenches. The first and second trenches are filled with an insulating material to form first and second isolation structures. A conductive layer is formed over the first and second isolation structures and between the first and second isolation structures to form a floating gate. The conductive layer and the first isolation structure are etched to form a third trench having an upper portion and a lower portion, the upper portion having vertical sidewalls and the lower portion having sloping sidewalls. The third trench is filled with a conductive material to form a control gate.
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Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Lee Jae
Richards N Drew
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