Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2009-10-21

2011-12-13

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S591000, C438S596000, C257SE21210, C257SE21679

Reexamination Certificate

active

08076201

ABSTRACT:
A method of manufacturing a flash memory device according to an embodiment includes forming a second oxide layer pattern having a mask pattern buried therein on a first nitride layer pattern and a first oxide layer stack on a semiconductor substrate; forming first polysilicon patterns at sidewalls of the buried mask pattern; removing portions of the first oxide layer, the first nitride layer pattern, and the second oxide layer pattern to form a third oxide layer pattern, a second nitride layer pattern, and a fourth oxide layer pattern at lower portions of the first polysilicon patterns and the mask pattern; forming a fifth oxide layer pattern surrounding each of the first polysilicon patterns; forming second polysilicon patterns on sidewalls of the fifth oxide layer pattern; and removing the mask pattern and parts of the third oxide layer pattern and the second nitride layer pattern between the first polysilicon patterns.

REFERENCES:
patent: 2004/0197995 (2004-10-01), Lee et al.

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