Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2007-09-25

2009-11-10

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21422, C438S270000

Reexamination Certificate

active

07615450

ABSTRACT:
Disclosed herein is a method of fabricating a flash memory device. The method includes providing a semiconductor substrate that includes an active region and a field region. A tunnel insulating layer and a first conductive layer are formed in the active region, and an isolation structure is formed in the field region. The method includes forming a dielectric layer along a surface of the first conductive layer and the isolation structure, forming a capping layer along a surface of the dielectric layer, and forming a hard mask layer over the capping layer. The method also includes performing a first etchant process to etch the capping layer and the dielectric layer over the isolation structure forming holes. The method further includes performing a second etch process to remove the hard mask layer to form an undercut in the dielectric layer. Still further, the method includes forming a second conductive layer over a structure in which the holes and the undercut are formed.

REFERENCES:
patent: 6468862 (2002-10-01), Tseng
patent: 6914013 (2005-07-01), Chung
patent: 6987047 (2006-01-01), Iguchi et al.
patent: 7084031 (2006-08-01), Lee
patent: 2004-153049 (2004-05-01), None
patent: 10-2005-0070529 (2005-07-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4095414