Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2008-01-22

2008-01-22

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257SE21209

Reexamination Certificate

active

11139059

ABSTRACT:
The present invention relates to a method of manufacturing a flash memory device. According to the method of manufacturing the flash memory device, a gate line is formed to have a structure in which a tunnel oxide film, a polysilicon layer for floating gate, dielectric films and a polysilicon layer for a control gate are stacked, etch damages are compensated for by means of an oxidization process, and a metal layer formed on the polysilicon layer for control gate is formed by means of a damascene process. Accordingly, it is possible to sufficiently compensate for etch damages, prevent generation of abnormal oxidization in a metal layer, and improve the reliability of a process and electrical characteristics of a device accordingly.

REFERENCES:
patent: 6605521 (2003-08-01), Ajmera et al.
patent: 6620684 (2003-09-01), Kim et al.
patent: 2000-232169 (2000-08-01), None
patent: 2002-198446 (2002-07-01), None
patent: 2002-0095547 (2002-12-01), None
patent: 2004-0055174 (2004-06-01), None

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