Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2007-05-01

2007-05-01

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S264000, C252S079100

Reexamination Certificate

active

10745008

ABSTRACT:
Disclosed is a method of manufacturing a flash memory device. In a flash memory device using a SA-STI scheme, a trench for isolation is buried with oxide. A field oxide film is then formed by means of a polishing process. Next, field oxide films of a cell region and a low-voltage transistor region are selectively etched by a given thickness. As EFH values of the cell region, the low-voltage transistor region and the high-voltage transistor region become same or similar, it is possible to secure stability of a subsequent process.

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