Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-03-21

2006-03-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000

Reexamination Certificate

active

07015097

ABSTRACT:
Provided relates to a method of a flash memory device, which performs a first rapid thermal oxidation process at a H2rich atmosphere for recovering an etched damage during a gate forming process, and performs a second rapid thermal oxidation process at the H2rich atmosphere for ion-activating after performing an ion implantation process for forming a cell transistor junction and a peripheral circuit transistor junction. As a result of those processes, a Si-dangling bond cut off during a gate etching process has a Si—H combination structure and the whole processing time is reduced, and thus an abnormal oxidation caused at an edge of an ONO layer and a tunnel oxide film, which can make it possible to prevent a smiling phenomena of the ONO layer and a bird's beak phenomena of the tunnel oxide film.

REFERENCES:
patent: 6465335 (2002-10-01), Kunikiyo
patent: 6605521 (2003-08-01), Ajmera et al.
patent: 2003/0003656 (2003-01-01), Dong et al.
patent: 2004/0038487 (2004-02-01), Olsen
patent: 2004/0259336 (2004-12-01), Yeh et al.

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