Method of manufacturing embedded...

Details Method of manufacturing embedded... Method of manufacturing embedded...

2010-11-02

2011-11-01

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C438S276000, C438S278000, C438S287000, C438S289000, C257SE21159, C257SE21408, C257SE21409, C257SE21613

Reexamination Certificate

active

08048747

ABSTRACT:
The present disclosure fabricates an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory device. The memory device is stacked with memory layers having a low aspect ratio. The memory device can be easily fabricated with only two extra masks for saving cost. The present disclosure uses a general method for mass-producing TFT and is thus fit for fabricating NAND-type or NOR-type flash memory to be used as embedded memory in a system-on-chip.

REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 7361554 (2008-04-01), Park et al.
patent: 7795677 (2010-09-01), Bangsaruntip et al.
patent: 7859066 (2010-12-01), Kito et al.
patent: 7969188 (2011-06-01), Wang
patent: 7972927 (2011-07-01), Fujitsuka et al.
patent: 7977748 (2011-07-01), Kito et al.

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