Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Quach, T. N. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S724000
Reexamination Certificate
active
10885713
ABSTRACT:
The invention provides a semiconductor device, which removes troubles occurring when the parasitic capacitance between layered wiring lines with an interlayer insulating film therebetween is reduced, and have a simple structure and high reliability. The electronic device according to the invention can include a semiconductor layer formed on a substrate, a gate insulating layer formed on the semiconductor layer, a gate electrode having a predetermined pattern and formed on the gate insulating layer, an interlayer insulating film formed to cover the gate electrode, a source electrode and a drain electrode formed on the interlayer insulating film. The interlayer insulating film can be mainly made of silicon oxynitride with a nitrogen concentration of atomic percent or higher.
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Kudo Manabu
Ohara Osamu
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