Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Reexamination Certificate
2008-11-21
2010-11-23
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
C438S149000, C438S463000, C438S513000, C257SE21051, C257SE21077, C257SE21058, C257SE21134, C257SE21189, C257SE21231, C257SE21311, C257SE21329, C257SE21411, C257SE21632
Reexamination Certificate
active
07838402
ABSTRACT:
A method of manufacturing an electronic apparatus having a resist pattern provided over a substrate provided with a thin film transistor, the method includes the steps of forming by application a resist film over the substrate in the state of covering the thin film transistor, forming a resist pattern by subjecting the resist film to exposure to light and a developing treatment, and irradiating the resist pattern with at least one of ultraviolet light and visible light in a dry atmosphere in the condition where a channel part of the thin film transistor is prevented from being irradiated with light having a wavelength of shorter than 260 nm, wherein a step of heat curing the resist pattern is conducted after the irradiation with at least one of ultraviolet light and visible light.
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Kanaya Yasuhiro
Mikami Yasuo
Mutoh Yoshifumi
Nagasawa Koichi
Ozaki Nobutaka
Nhu David
SNR Denton US LLP
Sony Corporation
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