Method of manufacturing dynamic random access memory

Details Method of manufacturing dynamic random access memory Method of manufacturing dynamic random access memory

1998-05-14

1998-12-22

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438397, H01L 218242

Patent

active

058518762

ABSTRACT:
A method of forming DRAMs that utilizes cap layers and spacers to surround the gate and bit line so that the necessary contact openings in DRAM can be formed in two self-aligned contact opening processing operations. Furthermore, the DRAM capacitor is formed by alternately depositing two types of insulating layers, one over the other, with each insulating layer having a different etching rate, and then performing an etching operation. Therefore, a deer antler-shaped mold is formed that can ultimately be used to fabricate a storage electrode with a large surface area.

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patent: 5770499 (1998-06-01), Kwok et al.
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