Method of manufacturing dual gate oxide film

Details Method of manufacturing dual gate oxide film Method of manufacturing dual gate oxide film

2005-06-21

2005-06-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S378000

Reexamination Certificate

active

06908805

ABSTRACT:
The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.

REFERENCES:
patent: 6037224 (2000-03-01), Buller et al.
patent: 6261972 (2001-07-01), Tews et al.
patent: 6642156 (2003-11-01), Gousev et al.
patent: 6784060 (2004-08-01), Ryoo

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