Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-02
2000-10-17
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438638, 438701, H01L 214763
Patent
active
061331406
ABSTRACT:
A method of manufacturing a semiconductor device with dual damascene structures. A first and second layer of interlayer dielectric separated by a first layer of etch stop material is formed on the surface of a semiconductor substrate on and in which active devices have been formed. A second layer of an etch stop material is formed on the surface of the second layer of interlayer dielectric. A layer of photoresist is formed on the second layer of etch stop material and is patterned and etched to expose portions of the second etch stop material. The exposed portions of the second etch stop material are anisotropically etched exposing portions of the second layer of interlayer dielectric. The exposed portions of the second layer of interlayer dielectric are first anisotropically etched and then isotropically etched. The etch stop layer between the first and second interlayer dielectric is anisotropically etched and the first layer of interlayer dielectric is anisotropically etched. The etched portions are then filled with a conductive material.
REFERENCES:
patent: 4832789 (1989-05-01), Cochran et al.
patent: 6064100 (2000-04-01), Ramaswami et al.
Scholer Thomas C.
Steffan Paul J.
Yu Allen S.
Advanced Micro Devices , Inc.
Everhart Caridad
Nelson H. Donald
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