Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-28
2006-02-28
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S615000
Reexamination Certificate
active
07005370
ABSTRACT:
A method for manufacturing an integrated circuit package is provided with a substrate having first and second contact pads exposed through a passivation layer on the substrate. A first metallurgy layer is formed over the substrate. A second metallurgy layer is formed over the first metallurgy layer. The first metallurgy layer is removed while leaving a portion thereof over the second contact pad. The second metallurgy layer is removed while leaving a portion thereof over the second contact pad. A protective layer is formed over the first contact pad while removing the first metallurgy layer.
REFERENCES:
patent: 6204074 (2001-03-01), Bertolet et al.
patent: 6749760 (2004-06-01), Danielson et al.
patent: 6762117 (2004-07-01), Lam et al.
Aung Kyaw Oo
Jin Yonggang
Looi Wan Lay
Shin Won Sun
Song Jae-Yong
Ishimaru Mikio
Smoot Stephen W.
ST Assembly Test Services Ltd.
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