Method of manufacturing cylindrical shaped capacitor

Details Method of manufacturing cylindrical shaped capacitor Method of manufacturing cylindrical shaped capacitor

1998-10-14

2000-12-05

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

06156608&

ABSTRACT:
A method of manufacturing a cylindrical shaped capacitor includes the steps of providing a substrate that already has a polysilicon plug and a word line formed thereon, and then forming an insulation layer and a first dielectric layer over the substrate. Thereafter, the first dielectric layer is patterned to form an opening. Then, a first conductive layer and a second dielectric layer are deposited in sequence over the first dielectric layer and the opening. Next, the first conductive layer and the second dielectric layer are etched back to form spacers on the sidewalls of the opening. Subsequently, etching is carried out down through the opening using the sidewall spacers as a mask until the polysilicon plug is exposed. After that, a second conductive layer is formed over entire substrate, and then the second conductive layer is etched back so that only a portion of the second conductive layer and the first conductive layer remain. The second and the first conductive layers together constitute the lower electrode of the capacitor. Finally, a dielectric thin film and a third conductive layer are formed in sequence over the lower electrode, thereby establishing a cylindrical shaped capacitor structure above the substrate.

REFERENCES:
patent: 5744833 (1998-04-01), Chao

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