Method of manufacturing contacts to diverse doped regions using

Details Method of manufacturing contacts to diverse doped regions using Method of manufacturing contacts to diverse doped regions using

1997-09-26

1999-10-19

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438648, 438233, 438658, 438621, 438677, H01L 2976

Patent

active

059703342

ABSTRACT:
In a method of manufacturing a semiconductor device having a first conductive layer of a first conductive type and a second conductive layer of a second conductive type opposite to the first conductive type, an intermediate layer of a predetermined element selected from the group V is formed on the first and second conductive layers to a preselected thickness of several atomic layers. Next, a metal film is deposited on the intermediate film. The intermediate layer is absorbed in the metal film and vanishes during the deposition of the metal film. The metal film may be formed of tungsten or molybdenum, while the thickness of the intermediate layer may be equal to one or two atomic layers.

REFERENCES:
patent: 4422885 (1983-12-01), Brower et al.
patent: 5641983 (1997-06-01), Kato et al.
patent: 5656836 (1997-08-01), Ikeda et al.

Affiliated with

Also associated with

Rating

Method of manufacturing contacts to diverse doped regions using does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing contacts to diverse doped regions using , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing contacts to diverse doped regions using will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068322