Method of manufacturing compound single crystal

Details Method of manufacturing compound single crystal Method of manufacturing compound single crystal

2006-09-05

2006-09-05

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S604000

Reexamination Certificate

active

07101774

ABSTRACT:
Provided is a method of manufacturing compound single crystals by epitaxially growing a compound single crystal layer differing from the substrate in which the planar defects generated in the crystal that is epitaxially grown are reduced. The method of manufacturing compound single crystals in which a compound single crystalline layer differing from a compound single crystalline substrate is epitaxially grown on the surface of said substrate. Plural undulations extending in a single direction are present on at least a portion of the surface of said substrate, and in that said undulations are provided in such a manner that as said compound single crystalline layer grows, the defects that grow meet each other.

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