Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-07-18
2006-07-18
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000
Reexamination Certificate
active
07078343
ABSTRACT:
Compound-semiconductor-wafer manufacturing whereby particle adherence, and obverse-surface oxidization and alteration are slight and the use of organic solvents is reduced. An adsorption pad is bonded to a polishing plate, and a wafer being adsorbed onto the adsorption pad without using wax is polished and thereafter stored within purified water without drying. Since storage is within purified water, particle adherence, and obverse-surface oxidization and alteration turn out to be slight, yielding a high-quality wafer. In the cleaning procedure following the aquatic storage, organic solvent washing is omitted. This allows the use/waste volume of noxious organic solvent to be reduced.
REFERENCES:
patent: 6069083 (2000-05-01), Miyashita et al.
patent: 6338805 (2002-01-01), Anderson
patent: 2003/0036570 (2003-02-01), Abe
patent: 2003/0139067 (2003-07-01), Abe et al.
patent: 926714 (1999-06-01), None
patent: 4-213825 (1992-08-01), None
patent: 5-166785 (1993-07-01), None
patent: 6-151304 (1994-05-01), None
patent: 11-204471 (1999-07-01), None
patent: 2000-308961 (2000-11-01), None
Mezaki Yoshio
Morimoto Toshiyuki
Okamoto Takatoshi
Deo Duy-Vu N.
Judge James W.
Sumitomo Electric Industries Ltd.
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