Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-16
2011-08-16
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21633, C257SE21634, C257SE21640, C257SE21430, C438S199000, C438S231000
Reexamination Certificate
active
07998821
ABSTRACT:
A method of manufacturing a CMOS is disclosed. A substrate has a first gate and a second gate. A dielectric layer and a patterned photo-resist layer are formed sequentially on the substrate. After an etching process, the dielectric layer without the photo-resist layer forms a spacer around the first gate, and the dielectric layer with the photo-resist layer forms a block layer on the second gate. The recesses are formed in the substrate of two lateral sides of the first gate. The epitaxial silicon layers are formed in the recesses.
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Chu Tsan-Chi
Shih Hung-Lin
Crawford Latanya N
Hsu Winston
Landau Matthew
Margo Scott
United Microelectronics Corp.
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