Method of manufacturing complementary metal oxide...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C257SE21633, C257SE21634, C257SE21640, C257SE21430, C438S199000, C438S231000

Reexamination Certificate

active

07998821

ABSTRACT:
A method of manufacturing a CMOS is disclosed. A substrate has a first gate and a second gate. A dielectric layer and a patterned photo-resist layer are formed sequentially on the substrate. After an etching process, the dielectric layer without the photo-resist layer forms a spacer around the first gate, and the dielectric layer with the photo-resist layer forms a block layer on the second gate. The recesses are formed in the substrate of two lateral sides of the first gate. The epitaxial silicon layers are formed in the recesses.

REFERENCES:
patent: 5268324 (1993-12-01), Aitken
patent: 5913116 (1999-06-01), Gardner et al.
patent: 5970351 (1999-10-01), Takeuchi
patent: 6159815 (2000-12-01), Lustig et al.
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 6300201 (2001-10-01), Shao
patent: 6362034 (2002-03-01), Sandford
patent: 6632718 (2003-10-01), Grider
patent: 6699763 (2004-03-01), Grider
patent: 7078285 (2006-07-01), Suenaga
patent: 7176110 (2007-02-01), van Bentum et al.
patent: 7176522 (2007-02-01), Cheng et al.
patent: 7348232 (2008-03-01), Chidambaram
patent: 7378305 (2008-05-01), Hatada et al.
patent: 7390707 (2008-06-01), Kawamura
patent: 7402496 (2008-07-01), Liu et al.
patent: 7407860 (2008-08-01), Kim
patent: 7491615 (2009-02-01), Wu et al.
patent: 7579262 (2009-08-01), Hoentschel et al.
patent: 2005/0035409 (2005-02-01), Ko et al.
patent: 2005/0035470 (2005-02-01), Ko et al.
patent: 2005/0093084 (2005-05-01), Wang et al.
patent: 2006/0024876 (2006-02-01), Chidambaram et al.
patent: 2006/0046367 (2006-03-01), Rotondaro et al.
patent: 2006/0157797 (2006-07-01), Tateshita
patent: 2006/0199285 (2006-09-01), Chidambaram et al.
patent: 2006/0286736 (2006-12-01), Orlowski et al.
patent: 2007/0020839 (2007-01-01), Sridhar et al.
patent: 2007/0200179 (2007-08-01), Chen
patent: 2007/0235802 (2007-10-01), Chong et al.
patent: 2007/0298574 (2007-12-01), Ekbote et al.
patent: 2008/0029815 (2008-02-01), Chen et al.
patent: 2008/0085577 (2008-04-01), Shih et al.
patent: 304285 (1997-05-01), None
patent: 445632 (2001-07-01), None
patent: 448512 (2001-08-01), None
patent: 481895 (2002-04-01), None
patent: 200400569 (2004-01-01), None

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