Method of manufacturing CMOS semiconductor devices by forming a

Details Method of manufacturing CMOS semiconductor devices by forming a Method of manufacturing CMOS semiconductor devices by forming a

1997-03-24

1999-02-23

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438683, H01L 218238

Patent

active

058743316

ABSTRACT:
A manufacturing method of simplifying the process and permitting SAC and the salicide technique by effecting the salicide process without removing a cap portion is provided. A manufacturing method of this invention includes a step of exposing part of the side surface of a gate electrode by effecting the anisotropic etching process in an over-etching fashion at the time of formation of side walls and converting a electrode material used as the gate electrode into silicide from the side surface of the exposed gate electrode.

REFERENCES:
patent: 4876213 (1989-10-01), Pfiester
patent: 5571735 (1996-11-01), Mogami et al.
patent: 5668024 (1997-09-01), Tsai et al.
patent: 5721175 (1998-02-01), Kunishima et al.

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