Method of manufacturing charge storage device

Details Method of manufacturing charge storage device Method of manufacturing charge storage device

2006-04-19

2008-07-29

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257S325000

Reexamination Certificate

active

07405166

ABSTRACT:
A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOzdeposition process. The etching rate for the HfxSiyOzlayer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOzlayer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

REFERENCES:
patent: 6635561 (2003-10-01), Kawai et al.
patent: 6706591 (2004-03-01), Chan et al.
patent: 2004/0004859 (2004-01-01), Forbes et al.
patent: 2005/0199944 (2005-09-01), Chen et al.

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