Method of manufacturing cathode for plasma etching apparatus usi

Details Method of manufacturing cathode for plasma etching apparatus usi Method of manufacturing cathode for plasma etching apparatus usi

1999-01-21

2000-11-21

Wong, Don

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

445 46, H01J 724

Patent

active

061507628

ABSTRACT:
A method of manufacturing a cathode for a plasma etching apparatus includes steps for making the inside of holes formed in the cathode and the surface of the cathode a hard surface so as to prevent particle generation while the cathode is in use for etching a wafer. These steps include: a) forming a plurality of holes in a silicon substrate; b) carrying out a physical-surface treatment on the surface of the silicon substrate using slurry; and c) carrying out a chemical-surface treatment for removing protrusions inside the holes formed on the silicon substrate and on the surface of the silicon substrate using potassium hydroxide (KOH). The cathode manufactured by this method has a hard surface formed thereon and inside the holes, and the hard surface has no protrusions. Without protrusions, no particles can be generated from protrusions being etched and loosened during the etching process, so no particles adhere to the wafer being etched.

REFERENCES:
patent: 3967150 (1976-06-01), Lien et al.
patent: 4745326 (1988-05-01), Greene et al.
patent: 4871580 (1989-10-01), Schram et al.
patent: 4874484 (1989-10-01), Foell et al.
patent: 5395481 (1995-03-01), McCarthy

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