Method of manufacturing capacitor of semiconductor device by...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S239000

Reexamination Certificate

active

10696465

ABSTRACT:
In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

REFERENCES:
patent: 5910218 (1999-06-01), Park et al.
patent: 6555394 (2003-04-01), Park et al.
patent: 6673669 (2004-01-01), Basceri et al.
patent: 6677254 (2004-01-01), Narwankar et al.
patent: 6720275 (2004-04-01), Park et al.
patent: 6794694 (2004-09-01), Diodato et al.
patent: 6797560 (2004-09-01), Hosoda et al.
patent: 6884675 (2005-04-01), Chung et al.
patent: 6900497 (2005-05-01), Agarwal et al.
patent: 001020901 (2000-07-01), None
patent: 2001-0027867 (2001-04-01), None
patent: 10-0331569 (2001-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing capacitor of semiconductor device by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing capacitor of semiconductor device by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing capacitor of semiconductor device by... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3754476

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.