Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-03-11
1999-02-02
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438234, 438231, 438300, 438301, 438363, 438373, 438374, 438526, 438549, 148DIG9, H01L 218238
Patent
active
058664467
ABSTRACT:
To enable a high speed operation and to increase the current gain, the disclosed a method of manufacturing a semiconductor device, comprising the steps of: forming a first semiconductor layer with a first-conductivity type in a semiconductor substrate; forming a second semiconductor layer with a second-conductivity type different from the first-conductivity type on the first semiconductor layer; insulation separating the formed second semiconductor layer into a first semiconductor region and a second semiconductor region by an insulating film; changing the second semiconductor region to the first-conductivity type; forming a pattern of an insulating film or a photoresist film having a hole at a partial area of the first semiconductor region of the semiconductor substrate; and implanting first-conductivity type impurities and second-conductivity type impurities at the first semiconductor region, respectively by use of the formed pattern as a mask, to form a first-conductivity type impurity region contacting with the first semiconductor layer and a second-conductivity type impurity region.
REFERENCES:
patent: 4180827 (1979-12-01), Gates
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 5100811 (1992-03-01), Winnerl et al.
patent: 5288652 (1994-02-01), Wang et al.
patent: 5439833 (1995-08-01), Hebert et al.
Nagata et al., "Tho-Kohsoku Bipolar Device", Standard Handbook for Bipolar Transistor Engineers, Chap. 4, Sec. 4.2, (1985), pp. 87-88.
Kabushiki Kaisha Toshiba
Niebling John
Pham Long
LandOfFree
Method of manufacturing bimos device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing bimos device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing bimos device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1116871