Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
1998-11-03
2001-10-02
Chaudhuri, Olik (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S643000
Reexamination Certificate
active
06297153
ABSTRACT:
This application claims priority under 35 U.S.C. §119 to Korean Application No. P98-5807, the entire contents of which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
1.Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device and the device formed thereby, and more particularly, to a method of manufacturing a barrier metal film of a semiconductor device, a method of manufacturing a metal interconnection film using the same and the apparatus formed thereby.
2. Description of the Related Art
A semiconductor device of a highly integrated circuit is constituted of various circuit patterns formed of various materials on a semiconductor substrate. Each circuit pattern is formed of a conductive semiconductor material such as impurity-doped silicon (Si) or a metal interconnection material such as aluminum (Al), platinum (Pt), copper (Cu) or tungsten (W). The circuit patterns formed of various materials are electrically connected via contact holes to constitute a circuit.
Here, in order to stabilize the interface between the contacting circuit patterns formed of different materials, a barrier metal film is necessary to prevent diffusion between the different materials, or a chemical reaction. Generally, a barrier metal film is formed as a titanium nitride (TiN) film, a tantalum nitride (TaN) film, a titanium silicide nitride (TiSiN) film or a tantalum silicide nitride (TaSiN) film. The barrier metal film must maintain a high conductivity, stably prevent diffusion, and be thermally stable.
However, many defects or microcracks are likely occur within a barrier metal film, which are concomitant phenomena of the step of forming a barrier metal film. Thus, material forming an interconnection film formed on the barrier metal film diffuses through the defects or microcracks of the barrier metal film, to reach the semiconductor substrate, thereby forming a junction spike. The electrical characteristics of the contact are deteriorated by such a junction spike, thereby increasing junction leakage current level. As a result, product yield and reliability are lowered.
SUMMARY OF THE INVENTION
To solve the above problems, it is an object of the present invention to provide a method of manufacturing a barrier metal film which more effectively prevents diffusion.
It is another object of the present invention to provide a method of manufacturing a metal interconnection film using the method of manufacturing the barrier metal film.
To achieve the first and other objects, there is provided a method of manufacturing a barrier metal film of a semiconductor device, including forming a barrier metal film on a semiconductor substrate, annealing the barrier metal film, and in-situ oxygen-annealing immediately after the annealing.
To achieve the second and other objects, there is provided a method of manufacturing a metal interconnection film of a semiconductor device, comprising the steps of: (a) forming a contact hole which exposes an impurity region formed on a semiconductor substrate; (b) forming a barrier metal film in the contact hole; (c) annealing the barrier metal film; (d) in-situ oxygen-annealing immediately after the step (c); and (e) forming an interconnection film on the oxygen-annealed barrier metal film.
Preferably, the annealing step is performed under a nitrogen atmosphere.
Preferably, the oxygen-annealing step is performed while providing oxygen for a predetermined time, short enough that the contact resistance of the barrier metal film stays below allowable range, and long enough to form an oxide film as a diffusion barrier film on the surface of the barrier metal film.
Preferably, the annealing step and the oxygen-annealing step are performed in a batch type furnace, and the oxygen-annealing step is performed by flowing oxygen at a predetermined flow rate which allows even oxygen-annealing regardless of the loading position of the semiconductor substrate within the furnace.
Preferably, the barrier metal film is a titanium nitride (TiN) film, and the interconnection film is an aluminum (Al) film, and an ohmic contact metal film, e.g., titanium film, is further formed in the contact hole before the step of forming the barrier metal film.
When the barrier metal film and the interconnection film are formed by the methods of the present invention, an amorphous oxide film for preventing diffusion is formed on the surface of the barrier metal film, to prevent a junction spike caused by diffusion of interconnection material into the barrier metal film.
These and other objects of the present invention will become more readily apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating the preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.
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Lee Sang-Woo
Park Jong-Min
Yoo Byoung-ju
Chaudhuri Olik
Jones Volentine, L.L.C.
Peralta Ginette
Samsung Electronics Co,. Ltd.
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