Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-11-29
2005-11-29
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S770000, C438S775000, C438S786000, C438S787000, C438S791000
Reexamination Certificate
active
06969689
ABSTRACT:
A method of forming oxide-nitride-oxide (ONO) dielectric of a SONOS-type nonvolatile storage device is disclosed. According to a first embodiment, a method may include the steps of forming a tunneling dielectric (step102), forming a charge storing dielectric (step104), and forming a top insulating layer (step106) all in the same wafer processing tool. According to various aspects of the embodiments, all layers of an ONO dielectric of a SONOS-type device may be formed in the same general temperature range. Further, a tunneling dielectric may include a tunnel oxide formed with a long, low pressure oxidation, and a top insulating layer may include silicon dioxide formed with a preheated source gas.
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Lancaster Loren
Parameshwaran Biju
Ramkumar Krishnaswamy
Rathor Manuj
Sako Bradley T.
Sarkar Asok Kumar
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