Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-27
2005-12-27
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S381000
Reexamination Certificate
active
06979608
ABSTRACT:
An on-chip inductor may be fabricated by creating at least one dielectric layer, creating at least one conductive winding on the at least one dielectric layer and creating: (1) a P-well layer having a major surface parallel to a major surface of the dielectric layer, (2) field oxide layer having a major surface parallel to a major surface of the dielectric layer, (3) P-well and field oxide layer, or (4) a poly-silicon layer having a major surface parallel to a major surface of the dielectric layer.
REFERENCES:
patent: 4713711 (1987-12-01), Jones et al.
patent: 6133079 (2000-10-01), Zhu et al.
patent: 6455915 (2002-09-01), Wong
“Progress in RF Inductors on Silicon—Understanding Substrate Losses” by Joachim N. Burghartz—IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598 USA.
IEEE Journal of Solid-State Circuits, vol. 33, No. 5, May 1998—the “Stanford Paper”—On-Chip Spiral Inductors With Patterned Ground Shields for Si-Based RF IC's —C.Patrick Yue, Student Member, IEEE, and S. Simon Wong, Senior Member, IEEE.
Contopanagos Harry
Komninakis Christos
Kyriazidou Sissy
Brewster William M.
Broadcom Corp.
Garlick Harrison & Markison LLP
Markison Timothy W.
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