Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-21
2011-06-21
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21639, C257S371000
Reexamination Certificate
active
07964460
ABSTRACT:
A CMOS device includes high k gate dielectric materials. A PMOS device includes a gate that is implanted with an n-type dopant. The NMOS device may be doped with either an n-type or a p-type dopant. The work function of the CMOS device is set by the material selection of the gate dielectric materials. A polysilicon depletion effect is reduced or avoided.
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Infineon - Technologies AG
Kraig William F
Le Thao X
Slater & Matsil L.L.P.
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