Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S206000, C257S368000, C257SE29011
Reexamination Certificate
active
11540261
ABSTRACT:
A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At least one of the first and second output transistors is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).
REFERENCES:
patent: 4779161 (1988-10-01), DeShazo, Jr.
patent: 4808861 (1989-02-01), Ehni
patent: 6867465 (2005-03-01), Dono
patent: 2002/0153585 (2002-10-01), Asano et al.
Bereznak Bradley J.
Budd Paul
Jackson Jerome
Power Integrations, Inc.
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