Method of manufacturing an integrated circuit device...

Details Method of manufacturing an integrated circuit device... Method of manufacturing an integrated circuit device...

2006-03-14

2006-03-14

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S238000, C438S253000, C438S396000

Reexamination Certificate

active

07011999

ABSTRACT:
A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

REFERENCES:
patent: 6156594 (2000-12-01), Gris
patent: 6410387 (2002-06-01), Cappelletti et al.
patent: 2000-164835 (2000-06-01), None
patent: 2000-269449 (2000-09-01), None

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