Method of manufacturing an insulating layer and method of...

Details Method of manufacturing an insulating layer and method of... Method of manufacturing an insulating layer and method of...

2006-08-08

2010-06-08

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S216000, C438S591000

Reexamination Certificate

active

07732297

ABSTRACT:
A method of forming an insulating layer and a method of manufacturing a semiconductor device using insulating layer are disclosed. A preliminary insulating layer including a material having a relatively low dielectric constant is formed on an object. An upper portion of the preliminary insulating layer is provided with an ozone gas to transform the preliminary insulating layer into an insulating layer having an upper insulating film including an oxide and a lower insulating film including the material having the relatively low dielectric constant. The upper insulating film may further be located on the lower insulating film.

REFERENCES:
patent: 4914497 (1990-04-01), Kondo
patent: 5530293 (1996-06-01), Cohen et al.
patent: 6875678 (2005-04-01), Jung et al.
patent: 2006/0102977 (2006-05-01), Fucsko et al.
patent: 7-14917 (1995-01-01), None
patent: 10-2001-0027003 (2001-04-01), None
patent: 2002-0073261 (2002-09-01), None
patent: 2003-0049567 (2003-06-01), None
English language abstract of Japanese Publication No. 7-14917.
English language abstract of Korean Publication No. 10-2001-0027003.
English language abstract of Korean Publication No. 2003-0049567.

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